CM1220
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
C DIODE
V DIODE
I LEAK
V SIG
V ESD
Parameter
Diode (Channel) Capacitance
Diode Standoff Voltage
Diode Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883, Method 3015
b) Contact Discharge per IEC 61000 ? 4 ? 2
Conditions
At 2.5 VDC Reverse Bias,
1 MHz, 30 mVAC
I DIODE = 10 m A
V IN = +3.3 V
(reverse bias voltage)
I DIODE = 10 mA
(Note 2)
Min
11
5.6
? 1.5
± 30
± 15
Typ
14
6.0
0.1
6.8
? 0.8
Max
17
1
9.0
? 0.4
Units
pF
V
m A
V
kV
R DYN
Dynamic Resistance
Positive
Negative
2.3
0.9
W
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open.
PERFORMANCE INFORMATION
Diode Characteristics (nominal conditions unless specified otherwise)
DC Voltage
Figure 1. Insertion Loss vs. Frequency (0 V Bias)
http://onsemi.com
3
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